silicon-sapphire interface

silicon-sapphire interface
skiriamasis silicio ir safyro paviršius statusas T sritis radioelektronika atitikmenys: angl. silicon-sapphire interface vok. Silizium-Saphir-Grenzfläche, f rus. поверхность раздела кремний-сапфир, f pranc. interface silicium-saphir, f

Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“. . 2000.

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  • interface silicium-saphir — skiriamasis silicio ir safyro paviršius statusas T sritis radioelektronika atitikmenys: angl. silicon sapphire interface vok. Silizium Saphir Grenzfläche, f rus. поверхность раздела кремний сапфир, f pranc. interface silicium saphir, f …   Radioelektronikos terminų žodynas

  • Silicon on sapphire — (SOS) is a hetero epitaxial process for integrated circuit manufacturing that consists of a thin layer (typically thinner than 0.6 micrometres) of silicon grown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of… …   Wikipedia

  • Silicon on insulator — technology (SOI) refers to the use of a layered silicon insulator silicon substrate in place of conventional silicon substrates in semiconductor manufacturing, especially microelectronics, to reduce parasitic device capacitance and thereby… …   Wikipedia

  • Silicon carbide — Chembox new Name = Silicon carbide ImageFile = Silicon carbide 3D balls.png ImageSize = 140px ImageName = Ball and stick model of part of a crystal of SiC ImageFile1 = silicon carbide detail.jpg ImageSize1 = 140px OtherNames = Section1 = Chembox… …   Wikipedia

  • Silizium-Saphir-Grenzfläche — skiriamasis silicio ir safyro paviršius statusas T sritis radioelektronika atitikmenys: angl. silicon sapphire interface vok. Silizium Saphir Grenzfläche, f rus. поверхность раздела кремний сапфир, f pranc. interface silicium saphir, f …   Radioelektronikos terminų žodynas

  • skiriamasis silicio ir safyro paviršius — statusas T sritis radioelektronika atitikmenys: angl. silicon sapphire interface vok. Silizium Saphir Grenzfläche, f rus. поверхность раздела кремний сапфир, f pranc. interface silicium saphir, f …   Radioelektronikos terminų žodynas

  • поверхность раздела кремний-сапфир — skiriamasis silicio ir safyro paviršius statusas T sritis radioelektronika atitikmenys: angl. silicon sapphire interface vok. Silizium Saphir Grenzfläche, f rus. поверхность раздела кремний сапфир, f pranc. interface silicium saphir, f …   Radioelektronikos terminų žodynas

  • crystal — crystallike, adj. /kris tl/, n., adj., v., crystaled, crystaling or (esp. Brit.) crystalled, crystalling. n. 1. a clear, transparent mineral or glass resembling ice. 2. the transparent form of crystallized quartz. 3. Chem., Mineral. a solid body… …   Universalium

  • Crystal — /kris tl/, n. 1. a city in SE Minnesota, near Minneapolis. 25,543. 2. a female given name. * * * I Any solid material whose atoms are arranged in a definite pattern and whose surface regularity reflects its internal symmetry. Each of a crystal s… …   Universalium

  • HDMI — (High Definition Multimedia Interface) …   Wikipedia

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